Sic-chip för energilagringsapplikationer

Mit der Verfügbarkeit von hochqualitativen 6-Zoll-SiC-Wafern können die Kosten für SiC-Chips jedoch gesenkt werden. In der Vergangenheit waren die meisten SiC-Anbieter …

Can sic be used as a power device material?

One of the success factors of implementing SiC as a power device material is the chance to adopt many of the well-known device concepts and processing technologies from silicon.

What are the benefits of using SiC based power?

Using SiC based power enables higher efficiency, power density and reduced system cost in many applications. This technology can also be considered as being an enabler for new applications and topologies.

What causes bipolar degradation in SiC devices?

Bipolar degradation in SiC devices is caused by BPDs (Basal Plane Dislocations), which are a common defect in a SiC substrate (wafer). This effect can happen to any SiC devices with a PN junction, regardless of device type and manufacturer.

What is the difference between silicon IGBT and SiC power devices?

While there are only minor differences between silicon IGBT technology and SiC power devices, their key distinction lies in their semiconductor material and resulting properties.

Why do I need to verify model parameters for SiC based power devices?

It is crucial to verify model parameters for their application and accuracy with respect to SiC. Infineon has extensively analyzed these parameters over the last 25 years during the development and production of SiC based power devices.

What is a SiC MOSFET?

A SiC MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of power semiconductor device. In a SiC MOSFET, the short circuit time and resulting power loss are in the range of 2–3 μs, which means the entire chip heat capacity cannot be utilized, and heat is generated almost completely in the very thin drift zone close to the surface of the chip.